Highly (100)-oriented Eu-doped PZT thin films on sol-gel derived (100)-textured LaNiO3/Si substrates

被引：9

作者：

Yu, YJ ^{[1
]}

Wang, FP

Chan, HLW

Zhao, LC

机构：

[1] Harbin Inst Technol, Sch Mat Sci & Engn, Harbin 150001, Peoples R China

[2] Hong Kong Polytech Univ, Dept Appl Phys, Hong Kong, Hong Kong, Peoples R China

来源：

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 2004年 / 78卷 / 05期

关键词：

D O I：

10.1007/s00339-002-1999-y

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

(100)-oriented LaNiO3 (LNO) thin films were grown on Si substrates by a sol-gel method followed by a rapid thermal process at temperatures ranging from 650degreesC to 800degreesC. The films produced at 700degreesC had a resistivity of 1.79 mOmega cm and could be used as bottom electrodes in the fabrication of ferroelectric capacitors on Si. Subsequently, a sol-gel derived Eu-doped Pb(Zr-0.52,Ti-0.48)O-3 (PEZT) thin film with a thickness of 130 nm prepared on the LNO electrode was found to have a (100)-oriented texture. Possible reasons for the high degree of (100) orientation in PEZT thin films are given. Good ferroelectric performance was obtained for Au/PEZT/LNO capacitors. The remnant polarization (2P(r)) was found to be 22 muC/cm(2) at a coercive electric field (E-c) of 134 kV/cm. After 10(11) polarization reversals, P-r decreased by only 15%.

引用

页码：733 / 736

页数：4

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