Junction Temperature Simulation of In As Quantum dot Laser Diodes for High Optical Power

被引：0

作者：

Park, Seung-Chul ^{[1
,2
]}

Han, Ii Ki ^{[1
]}

机构：

[1] Korea Inst Sci & Technol, Nanophoton Res Ctr, Seoul 136791, South Korea

[2] Yanbian Univ Sci & Technol, Sch Mat Mech & Automat Engn, Yanji 133000, Jilin, Peoples R China

来源：

JOURNAL OF THE KOREAN PHYSICAL SOCIETY | 2011年 / 59卷 / 05期

关键词：

Laser diodes; Junction temperature; Quantum dot; Finite-element method; OPERATION;

D O I：

10.3938/jkps.59.3146

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Junction temperature of In As quantum-dot laser diodes (LDs) with different geometric dimensions is analyzed by using a finite-element method for the purpose of high-optical-power application. In particular, we found that the junction temperature of LDs epi-up mounted on a Cu sub-mount changed significantly depending on the LD chip width. The junction temperature at 1.5 W in the CW mode was reduced from about 500 K to 350 K when the LD chip width was widened from 50 mu m to 500 mu m.

引用

页码：3146 / 3149

页数：4

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