Hardness, elastic modulus, and wear resistance of hafnium oxide-based films grown by atomic layer deposition

被引:37
作者
Berdova, Maria [1 ]
Liu, Xuwen [1 ]
Wiemer, Claudia [2 ]
Lamperti, Alessio [2 ]
Tallarida, Grazia [2 ]
Cianci, Elena [2 ]
Fanciulli, Marco [2 ,3 ]
Franssila, Sami [1 ]
机构
[1] Aalto Univ, Dept Mat Sci & Engn, Espoo 02150, Finland
[2] IMM CNR, Lab MDM, Via C Olivetti 2, I-20864 Agrate Brianza, MB, Italy
[3] Univ Milano Bicocca, Dipartimento Sci Mat, I-20126 Milan, Italy
来源
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A | 2016年 / 34卷 / 05期
关键词
THIN-FILMS; TRIMETHYLALUMINUM; HFO2; LOAD;
D O I
10.1116/1.4961113
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
The investigation of mechanical properties of atomic layer deposition HfO2 films is important for implementing these layers in microdevices. The mechanical properties of films change as a function of composition and structure, which accordingly vary with deposition temperature and post-annealing. This work describes elastic modulus, hardness, and wear resistance of as-grown and annealed HfO2. From nanoindentation measurements, the elastic modulus and hardness remained relatively stable in the range of 163-165 GPa and 8.3-9.7 GPa as a function of deposition temperature. The annealing of HfO2 caused significant increase in hardness up to 14.4 GPa due to film crystallization and densification. The structural change also caused increase in the elastic modulus up to 197 GPa. Wear resistance did not change as a function of deposition temperature, but improved upon annealing. (C) 2016 American Vacuum Society.
引用
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页数:7
相关论文
共 28 条
[1]  
Akgul M, 2009, SOL STAT SENS ACT MI, P798
[2]   Fatigue-resistant silicon films coated with nanoscale alumina layers [J].
Baumert, E. K. ;
Theillet, P. -O. ;
Pierron, O. N. .
SCRIPTA MATERIALIA, 2011, 65 (07) :596-599
[3]  
Berdova M., 2013, AT LAYER DEP C ALD A
[4]   Protective coatings of hafnium dioxide by atomic layer deposition for microelectromechanical systems applications [J].
Berdova, Maria ;
Wiemer, Claudia ;
Lamperti, Alessio ;
Tallarida, Grazia ;
Cianci, Elena ;
Lamagna, Luca ;
Losa, Stefano ;
Rossini, Silvia ;
Somaschini, Roberto ;
Gioveni, Salvatore ;
Fanciulli, Marco ;
Franssila, Sami .
APPLIED SURFACE SCIENCE, 2016, 368 :470-476
[5]   Mechanical assessment of suspended ALD thin films by bulge and shaft-loading techniques [J].
Berdova, Maria ;
Ylitalo, Tuomo ;
Kassamakov, Ivan ;
Heino, Jouni ;
Torma, Pekka T. ;
Kilpi, Lauri ;
Ronkainen, Helena ;
Koskinen, Jari ;
Haeggstrom, Edward ;
Franssila, Sami .
ACTA MATERIALIA, 2014, 66 :370-377
[6]   Formation and disruption of conductive filaments in a HfO2/TiN structure [J].
Brivio, S. ;
Tallarida, G. ;
Cianci, E. ;
Spiga, S. .
NANOTECHNOLOGY, 2014, 25 (38)
[7]   ANISOTROPY IN HARDNESS OF SINGLE CRYSTALS [J].
BROOKES, CA ;
ONEILL, JB ;
REDFERN, BAW .
PROCEEDINGS OF THE ROYAL SOCIETY OF LONDON SERIES A-MATHEMATICAL AND PHYSICAL SCIENCES, 1971, 322 (1548) :73-&
[8]   Phase Stabilization of Al:HfO2 Grown on InxGal1-xAs Substrates (x=0, 0.15, 0.53) via Trimethylaluminum-Based Atomic Layer Deposition [J].
Cianci, Elena ;
Molle, Alessandro ;
Lamperti, Alessio ;
Wiemer, Claudia ;
Spiga, Sabina ;
Fanciulli, Marco .
ACS APPLIED MATERIALS & INTERFACES, 2014, 6 (05) :3455-3461
[9]  
FIZ Karlsruhe, 2015, ICSD INT CRYST STRUC
[10]   Low-temperature Al2O3 atomic layer deposition [J].
Groner, MD ;
Fabreguette, FH ;
Elam, JW ;
George, SM .
CHEMISTRY OF MATERIALS, 2004, 16 (04) :639-645