Monolithic InGaAsP optoelectronic devices with silicon electronics

被引：19

作者：

Fehly, D ^{[1
]}

Schlachetzki, A ^{[1
]}

Bakin, AS ^{[1
]}

Guttzeit, A ^{[1
]}

Wehmann, HH ^{[1
]}

机构：

[1] Tech Univ Braunschweig, Inst Semicond Technol, D-38023 Braunschweig, Germany

来源：

IEEE JOURNAL OF QUANTUM ELECTRONICS | 2001年 / 37卷 / 10期

关键词：

light-emitting diodes; monolithic integrated circuits; photodetectors; silicon;

D O I：

10.1109/3.952535

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The interface between optoelectronic devices and microelectronic circuits is the crucial component in the further development of optical communications, calling for inexpensive mass-produced solutions. We present a procedure for how these diverse elements can be monolithically integrated. A stringent requirement is the compatibility with existing fabrication techniques of microelectronic circuits in silicon. We demonstrate the feasibility of our method by the monolithic integration of a photodetector, based on InGaAs-InP, with a three-stage MOS amplifier on a Si substrate in (100) crystallographic orientation. Basic performance figures (dark current, sensitivity) are comparable to those obtained with test structures on the native InP substrate. We show that the developed technologies can be extended to light-emitting diodes and laser structures displaying efficient electroluminescence.

引用

页码：1246 / 1252

页数：7

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