MeV ion beam induced epitaxial crystallization of Si0.99C0.01 layers on silicon.

Multiple energy carbon ion implantation was used to form a 150 nm thick uniformly lat.%-doped layers in preamorphized silicon. Unlike conventional furnace annealing, inefficient up to 700 degrees C, a 1.5 MeV Kr-84(+) bombardment is shown to induce the crystallization of such layers at temperatures ranging between 400 and 500 degrees C. RBS-channeling measurements have been used to estimate the crystallization velocity which is in the order of 10 nm per 10(15) cm(-2). After complete recrystallization, the films have been characterized by Fourier Transform Infra-Red spectroscopy showing that the carbon atoms are neither located in substitutional position nor precipitated in SiC clusters. However, the carbon profile, measured by Secondary Ion Mass Spectroscopy is not modified by the process and oblique incidence channeling angular scans demonstrate that the layers are strained.