Efficient Optical Coupling between III-V Semiconductor and SiNx Waveguides via Heteroepitaxial Integration

被引：2

作者：

Heidelberger, Christopher ^{[1
]}

Sorace-Agaskar, Cheryl ^{[1
]}

Plant, Jason J. ^{[1
]}

Kharas, Dave ^{[1
]}

Swint, Reuel B. ^{[1
]}

Dhingra, Pankul ^{[2
]}

Lee, Minjoo L. ^{[2
]}

Juodawlkis, Paul W. ^{[1
]}

机构：

[1] MIT, Lincoln Lab, Lexington, MA 02420 USA

[2] Univ Illinois, Dept Elect & Comp Engn, 1406 W Green St, Urbana, IL 61801 USA

来源：

2021 ANNUAL CONFERENCE OF THE IEEE PHOTONICS SOCIETY (IPC) | 2021年

关键词：

D O I：

10.1109/IPC48725.2021.9593053

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We demonstrate the first reported integration of III-V waveguides (GaAs/Al0.4Ga0.6As) with SiNx waveguides via heteroepitaxial III-V-on-silicon growth. We achieve efficient optical coupling (-2.5 dB loss/transition) at 1550 nm and low threading dislocation density (4 x 10(6) cm(-2)), suitable for fabrication of high-performance optoelectronic devices. (C) 2021 Massachusetts Institute of Technology

引用

页数：2

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