Efficient Optical Coupling between III-V Semiconductor and SiNx Waveguides via Heteroepitaxial Integration

被引:2
作者
Heidelberger, Christopher [1 ]
Sorace-Agaskar, Cheryl [1 ]
Plant, Jason J. [1 ]
Kharas, Dave [1 ]
Swint, Reuel B. [1 ]
Dhingra, Pankul [2 ]
Lee, Minjoo L. [2 ]
Juodawlkis, Paul W. [1 ]
机构
[1] MIT, Lincoln Lab, Lexington, MA 02420 USA
[2] Univ Illinois, Dept Elect & Comp Engn, 1406 W Green St, Urbana, IL 61801 USA
来源
2021 ANNUAL CONFERENCE OF THE IEEE PHOTONICS SOCIETY (IPC) | 2021年
关键词
D O I
10.1109/IPC48725.2021.9593053
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
We demonstrate the first reported integration of III-V waveguides (GaAs/Al0.4Ga0.6As) with SiNx waveguides via heteroepitaxial III-V-on-silicon growth. We achieve efficient optical coupling (-2.5 dB loss/transition) at 1550 nm and low threading dislocation density (4 x 10(6) cm(-2)), suitable for fabrication of high-performance optoelectronic devices. (C) 2021 Massachusetts Institute of Technology
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页数:2
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