Strained Si/SiGe quantum well MODFETs for cryogenic circuit applications

被引：4
|
作者：
Rack, MJ
Thornton, TJ [1 ]
Ferry, DK
Huffman, J
Westhoff, R
机构：
[1] Arizona State Univ, Dept Elect Engn, Tempe, AZ 85287 USA
[2] Arizona State Univ, Ctr Solid State Elect Res, Tempe, AZ 85287 USA
[3] Lawrence Semicond Res Labs, Tempe, AZ 85282 USA
来源：
SOLID-STATE ELECTRONICS | 2001年 / 45卷 / 07期
基金：
美国国家航空航天局;
关键词：
strained Si/SiGe quantum wells; cryogenic circuits; magnetotransport;
D O I：
10.1016/S0038-1101(01)00198-8
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We present results from a strained Si/SiGe quantum well MODFET measured over the temperature range 4.2-0.3 K. The Si/SiGe quantum wells are characterized by magnetotransport measurements and Auger electron spectroscopy, The I-V characteristics of the device are well behaved with no sign of the 'kink-effect' often seen in cryogenic CMOS, The device performance is limited by the resistance of the source and drain contacts. By extracting the parasitic contact resistance, we are able to determine the intrinsic transconductance of the device, which is comparable to values measured in cryogenic CMOS. (C) 2001 Elsevier Science Ltd. All rights reserved.
引用
收藏
页码：1199 / 1203
页数：5
相关论文
共 50 条
  • [41] Strained Si and SiGe Nanowire Tunnel FETs for Logic and Analog Applications
    Zhao, Qing-Tai
    Richter, Simon
    Schulte-Braucks, Christian
    Knoll, Lars
    Blaeser, Sebastian
    Gia Vinh Luong
    Trellenkamp, Stefan
    Schaefer, Anna
    Tiedemann, Andreas
    Hartmann, Jean-Michel
    Bourdelle, Konstantin
    Mantl, Siegfried
    IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY, 2015, 3 (03): : 103 - 114
  • [42] Mobility enhancement of strained Si by optimized SiGe/Si/SiGe structures
    Huang, S-H.
    Lu, T-M.
    Lu, S-C.
    Lee, C-H.
    Liu, C. W.
    Tsui, D. C.
    APPLIED PHYSICS LETTERS, 2012, 101 (04)
  • [43] Observation of type-I and type-II excitons in strained Si/SiGe quantum-well structures
    Wang, K. Y.
    Huang, W. P.
    Cheng, H. H.
    Sun, G.
    Soref, R. A.
    Nicholas, R. J.
    Suen, Y. W.
    APPLIED PHYSICS LETTERS, 2007, 91 (07)
  • [44] Photoluminescence and Raman study of a tensilely strained Si type-II quantum well on a relaxed SiGe graded buffer
    Santos, N. M.
    Leitao, J. P.
    Sobolev, N. A.
    Correia, M. R.
    Carmo, M. C.
    Soares, M. R.
    Kasper, E.
    Werner, J.
    SEMICONDUCTOR NANOSTRUCTURES TOWARDS ELECTRONIC AND OPTOELECTRONIC DEVICE APPLICATIONS II (SYMPOSIUM K, E-MRS 2009 SPRING MEETING), 2009, 6
  • [45] Interdiffusion in strained Si/strained SiGe epitaxial heterostructures
    Xia, Guangrui
    Canonico, Michael
    Hoyt, Judy L.
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2007, 22 (01) : S55 - S58
  • [46] Design and fabrication of Si/SiGe n-type MODFETs
    Gluck, M
    Hackbarth, T
    Birk, M
    Haas, A
    Kohn, E
    Konig, U
    PHYSICA E, 1998, 2 (1-4): : 763 - 767
  • [47] Terahertz imaging using strained-Si MODFETs as sensors
    Meziani, Y. M.
    Garcia-Garcia, E.
    Velazquez-Perez, J. E.
    Coquillat, D.
    Dyakonova, N.
    Knap, W.
    Grigelionis, I.
    Fobelets, K.
    SOLID-STATE ELECTRONICS, 2013, 83 : 113 - 117
  • [48] Photoluminescence of a tensilely strained silicon quantum well on a relaxed SiGe buffer layer
    Boucaud, P
    El Kurdi, M
    Hartmann, JM
    APPLIED PHYSICS LETTERS, 2004, 85 (01) : 46 - 48
  • [49] Electrothermal Monte Carlo simulation of submicrometer Si/SiGe MODFETs
    Sadi, Toufik
    Kelsall, Robert W.
    Pilgrim, Neil J.
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2007, 54 (02) : 332 - 339
  • [50] Study on threshold voltage model of strained SiGe quantum well channel SOIPMOSFET
    Zhang He-Ming
    Cui Xiao-Ying
    Hu Hui-Yong
    Dai Xian-Ying
    Xuan Rong-Xi
    ACTA PHYSICA SINICA, 2007, 56 (06) : 3504 - 3508
12345