Study of Mg diffusion during metalorganic chemical vapor deposition of GaN and AlGaN

被引：38

作者：

Chang, YL ^{[1
]}

Ludowise, M ^{[1
]}

Lefforge, D ^{[1
]}

Perez, B ^{[1
]}

机构：

[1] Hewlett Packard Labs, Palo Alto, CA 94304 USA

来源：

APPLIED PHYSICS LETTERS | 1999年 / 74卷 / 05期

关键词：

D O I：

10.1063/1.122988

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The diffusion behaviors of Mg in GaN and AlGaN layers are investigated using otherwise undoped GaN test structures containing three Mg-dopant spikes. These simplified structures enable accurate dopant profiling by avoiding the formation of nonplanar V-shaped defects, as confirmed by atomic force microscopy measurements. We also study the Mg distribution in GaN: Mg/AlGaN heterostructures. In all cases, no significant diffusion/segregation behaviors were observed for Mg in nitride material systems at 1060 degrees C over a 1.25 h time. (C) 1999 American Institute of Physics. [S0003-6951(99)01205-X].

引用

页码：688 / 690

页数：3

共 15 条

[1] ROOM-TEMPERATURE LOW-THRESHOLD SURFACE-STIMULATED EMISSION BY OPTICAL-PUMPING FROM AL0.1GA0.9N/GAN DOUBLE-HETEROSTRUCTURE [J].