Optical transitions and excitonic recombination in InAs/InP self-assembled quantum wires

被引：55

作者：

Alén, B

Martínez-Pastor, J

García-Cristobal, A

González, L

García, JM

机构：

[1] Univ Valencia, Inst Ciencias Mat, Valencia 46071, Spain

[2] CSIC, CNM, Inst Microelect Madrid, Madrid 28760, Spain

来源：

APPLIED PHYSICS LETTERS | 2001年 / 78卷 / 25期

关键词：

D O I：

10.1063/1.1379991

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

InAs self-assembled quantum wire structures have been grown on InP substrates and studied by means of photoluminescence and polarized-light absorption measurements. According to our calculations, the observed optical transitions in each sample are consistent with wires of different heights, namely from 6 to 13 monolayers. The nonradiative mechanism limiting the emission intensity at room temperature is related to thermal escape of carriers out of the wires. (C) 2001 American Institute of Physics.

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页码：4025 / 4027

页数：3

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