Fabrication of InP/InGaAs DHBTs with Buried SiO2 Wires

被引：0

作者：

Takebe, Naoaki ^{[1
]}

Kobayashi, Takashi ^{[1
]}

Suzuki, Hiroyuki ^{[1
]}

Miyamoto, Yasuyuki ^{[1
]}

Furuya, Kazuhito ^{[1
]}

机构：

[1] Tokyo Inst Technol, Tokyo 1528550, Japan

来源：

IEICE TRANSACTIONS ON ELECTRONICS | 2011年 / E94C卷 / 05期

基金：

日本学术振兴会;

关键词：

heterojunction bipolar transistor; InP; MOCVD; CBr4;

D O I：

10.1587/transele.E94.C.830

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper, we report the fabrication and device characteristics of InP/InGaAs double heterojunction bipolar transistors (DHBTs) with buried SiO2 wires. The SiO2 wires were buried in the collector and subcollector layers by metalorganic chemical vapor deposition toward reduction of the base-collector capacitance under the base electrode. A current gain of 22 was obtained at an emitter current density of 1.25 MA/cm(2) for a DHBT with an emitter width of 400 nm. The DC characteristics of DHBTs with buried SiO2 wires were the same as those of DHBTs without buried SiO2 wires on the same substrate. A current gain cutoff frequency (f(T)) of 213 GHz and a maximum oscillation frequency (f(max)) of 100 GHz were obtained at an emitter current density of 725 kA/cm(2).

引用

页码：830 / 834

页数：5

共 7 条

[1]

LOBISSER E, 2009, 200 NM INGAASINP TYP

[2] InP buried growth of SiO2 wires toward reduction of collector capacitance in HBT [J].