Comparison of InAs islands self-assembled on pseudomorphic and metamorphic InAlAs buffer layers grown on GaAs substrate

被引：1

作者：

Cordier, Y

Miska, P

Ferre, D

机构：

[1] Univ Lille 1, UMR CNRS 8520, Inst Elect & Microelect Nord, F-59652 Villeneuve Dascq, France

[2] Univ Lille 1, Lab Struct & Proprietes Etat Solide, F-59650 Villeneuve Dascq, France

来源：

JOURNAL OF CRYSTAL GROWTH | 2001年 / 227卷

关键词：

atomic force microscopy; nanostructures; reflection high energy electron diffraction; molecular beam epitaxy; semiconducting III-V materials;

D O I：

10.1016/S0022-0248(01)00979-4

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

In this work, MBE growth of InAs islands on InAlAs layers lattice mismatchcd to GaAs substrates has been studied. Both pseudomorphic and metamorphic InAlAs buffer layers were used as a template prior to the deposition of InAs. The effects of incorporating aluminium atoms in the buffer layer and the strain relaxation in the InAlAs layer os well as the InAs coverage on the density and the size of the islands are shown. (C) 2001 Elsevier Science B.V. All rights reserved.

引用

页码：1016 / 1019

页数：4

共 5 条

[1] Role of buffer surface morphology and alloying effects on the properties of InAs nanostructures grown on InP(001) [J].