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Effects of cation doping on thermoelectric properties of Bi2S3 materials
被引:5
作者:
Hou, Haigang
[1
]
Yang, Jian
[1
]
Liu, Guiwu
[1
]
Zhang, Xiangzhao
[1
]
Qiao, Guanjun
[1
]
机构:
[1] Jiangsu Univ, Sch Mat Sci & Engn, Zhenjiang 212013, Jiangsu, Peoples R China
基金:
中国国家自然科学基金;
关键词:
N-TYPE BI2S3;
GRAIN-BOUNDARIES;
BULK MATERIALS;
PERFORMANCE;
CONDUCTIVITY;
DEFECTS;
D O I:
10.1007/s10854-022-09007-w
中图分类号:
TM [电工技术];
TN [电子技术、通信技术];
学科分类号:
0808 ;
0809 ;
摘要:
Bi2S3 polycrystals doped with Al, Mn, Ag, and In were fabricated by vacuum melting and plasma activated sintering process, and the phase, microstructure, electrical, and thermal properties were investigated. The electrical conductivity is enhanced via Al and Ag doping. Compared with the Ag dopant, a higher electrical conductivity is achieved in the Al-doped sample, resulting in a peak power factor value of 1.96 mu W/cmK(2) at 423 K. Meanwhile, the thermal conductivity of Bi1.99Al0.01S3 sample is very low in the Bi2S3 system due to the high-density defects, and is only 0.39 Wm(-1) K-1 at 740 K. By combining a power factor and a low thermal conductivity, a peak ZT value of 0.29 at 740 K is achieved in the Bi1.99Al0.01S3 sample, being about two times larger than that of pristine Bi2S3.
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页码:22291 / 22299
页数:9
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