Preparation of ZnO Semiconductor Formaldehyde Gas Sensor

被引:0
作者
Feng Qiaohua [1 ]
Zhao Ruru [1 ]
Ma Xintian [1 ]
Shi Yunbo [1 ]
机构
[1] Harbin Univ Sci & Technol, Inst Measurement Control Technol & Commun Engn, Higher Educ Key Lab Measuring & Control Technol &, Harbin, Peoples R China
来源
PROCEEDINGS OF 2013 2ND INTERNATIONAL CONFERENCE ON MEASUREMENT, INFORMATION AND CONTROL (ICMIC 2013), VOLS 1 & 2 | 2013年
关键词
ZnO; formaldehyde; inorganic semiconductor; gas sensor;
D O I
暂无
中图分类号
TP [自动化技术、计算机技术];
学科分类号
0812 ;
摘要
Aimed at the current interior decoration formaldehyde pollution problems, through the analysis of the metal oxide semiconductor gas sensor characteristics and sensing mechanism, this paper combined with the influence of nanotechnology on sensor performance and designed semiconductor-type ZnO formaldehyde gas sensor. Prepared nano-ZnO using the sol-gel, doped H2PtCl6, La2O3 according to a certain proportion, sintered at 500 degrees C for 3 hours and inorganic semiconductor sensitive material was compounded. By scanning electron microscopy (SEM) and differential thermal analyzer (DTA) the test results showed that the powder prepared was the nano-particle, the small particle size, and dispersion; sintering temperature was above 445 degrees C. The sensor performance was test, the results showed that: the optimum operating voltage of the sensor was 4.8V, sensitivity was Sppm, response time was 6s, detection range was 5-155ppm, and selectivity to alcohol, gasoline, carbon monoxide and other gases was high.
引用
收藏
页码:238 / 242
页数:5
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