Resonant transport in Nb/GaAs/AlGaAs/GaAs microstructures

被引：0

作者：

Giazotto, F ^{[1
]}

Pingue, P ^{[1
]}

Beltram, F ^{[1
]}

Lazzarino, M ^{[1
]}

Orani, D ^{[1
]}

Rubini, S ^{[1
]}

Franciosi, A ^{[1
]}

机构：

[1] INFM, NEST, I-56126 Pisa, Italy

来源：

TOWARDS THE CONTROLLABLE QUANTUM STATES: MESOSCOPIC SUPERCONDUCTIVITY AND SPINTRONICS | 2003年

关键词：

D O I：

10.1142/9789812705556_0046

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Resonant transport in a hybrid semi conductor-superconductor microstructure grown by MBE on GaAs in presented. This structure experimentally realizes the prototype system originally proposed by de Gennes and Saint-James in 1963 in all-metal structures. A low temperature single peak superimposed to the characteristic Andreev-dominated subgap conductance represents the mark of such resonant behavior. Random matrix theory of quantum transport was employed in order to analyze the observed magnetotransport properties and ballistic effects were included by directly solving the Bogoliubov-de Gennes equations.

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页码：270 / 275

页数：6

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