Experimental and theoretical studies of Si-Cl and Ge-Cl σ-bond activation reactions by iridium-hydride

被引:29
作者
Kameo, H. [1 ]
Ikeda, K. [1 ]
Sakaki, S. [2 ]
Takemoto, S. [1 ]
Nakazawa, H. [3 ]
Matsuzaka, H. [1 ]
机构
[1] Osaka Prefecture Univ, Grad Sch Sci, Dept Chem, Naka Ku, Gakuen Cho 1-1, Sakai, Osaka 5998531, Japan
[2] Kyoto Univ, Fukui Inst Fundamental Chem, Sakyo Ku, Takano Nishihiraki Cho 34-4, Kyoto 6068103, Japan
[3] Osaka City Univ, Grad Sch Sci, Dept Chem, Sumiyoshi Ku, Sugimoto 3-3-138, Osaka 5588585, Japan
基金
日本学术振兴会;
关键词
OXIDATIVE ADDITION; SILYL HALIDES; H ACTIVATION; COMPLEXES BEARING; RHODIUM COMPLEXES; METAL INSERTION; SILICON-HALOGEN; MILD CONDITIONS; METHYL-IODIDE; AB-INITIO;
D O I
10.1039/c6dt00003g
中图分类号
O61 [无机化学];
学科分类号
070301 ; 081704 ;
摘要
We report the iridium hydride-mediated Si-Cl and Ge-Cl sigma-bond activation in a low-polarity toluene solution owing to diphosphine-chelation, in which the Si-Cl and Ge-Cl sigma-bonds are readily cleaved through an S(N)2-type pathway via the formation of a free chloride anion.
引用
收藏
页码:7570 / 7580
页数:11
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