Probing zone-boundary optical phonons in doped graphene

被引：17

作者：

Saha, Srijan Kumar ^{[1
]}

Waghmare, U. V.

Krishnamurthy, H. R.

Sood, A. K.

机构：

[1] Indian Inst Sci, Dept Phys, Bangalore 560012, Karnataka, India

[2] Jawaharlal Nehru Ctr Adv Sci Res, Theoret Sci Unit, Bangalore 560064, Karnataka, India

来源：

PHYSICAL REVIEW B | 2007年 / 76卷 / 20期

关键词：

D O I：

10.1103/PhysRevB.76.201404

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We use first-principles density-functional theory to determine the adiabatic frequency shift of the A(1)(')-K and E-'-K phonons in a monolayer graphene as a function of both electron and hole doping. Compared to the results for the E-2g-Gamma phonon (Raman G band), the results for the A(1)(')-K phonon are dramatically different, while those for the E-'-K phonon are not so different. Furthermore, we calculate the frequency shifts, as a function of the charge doping of the (K+Delta K) phonons responsible for the Raman 2D band-a key fingerprint of graphene, where parallel to Delta K parallel to is determined by the double-resonance Raman process.

引用

页数：4

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