Estimation of relative defect densities in InGaN laser diodes by induced absorption of photoexcited carriers

被引：7

作者：

Kim, C. S. ^{[1
]}

Jang, Y. D. ^{[1
]}

Shin, D. M. ^{[1
]}

Kim, J. H. ^{[1
]}

Lee, D. ^{[1
]}

Choi, Y. H. ^{[2
]}

Noh, M. S. ^{[2
]}

Yee, K. J. ^{[1
,3
,4
]}

机构：

[1] Chungnam Natl Univ, Dept Phys, Taejon 305764, South Korea

[2] LG Elect Adv Res Inst, Seoul 137724, South Korea

[3] Chungnam Natl Univ, GRAST, Taejon 305764, South Korea

[4] Chungnam Natl Univ, Ctr Subwavelength Opt, Taejon 305764, South Korea

来源：

OPTICS EXPRESS | 2010年 / 18卷 / 26期

基金：

新加坡国家研究基金会;

关键词：

NONLINEAR ABSORPTION; QUANTUM-WELLS; GAN; SEMICONDUCTORS; LUMINESCENCE; EMISSION; DYNAMICS; LAYERS; GAAS;

D O I：

10.1364/OE.18.027136

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

Defects are one of the most important factors influencing the optical properties of groups III-V nitride semiconductor materials and thereby their applicability to light-emitting diodes. In this paper, we demonstrate that it is possible to estimate the presence of defects in InGaN laser diodes by performing pump-probe measurements and observing the induced absorptions. We have confirmed that the induced absorption originates from defects by performing experiments in which the pump intensity is varied. We believe that our method provides a powerful tool for evaluating the optical quality of InGaN materials before processing them into device fabrications. (C) 2010 Optical Society of America

引用

页码：27136 / 27141

页数：6

共 20 条

[1]

Benjamin SD, 1996, APPL PHYS LETT, V68, P2544, DOI 10.1063/1.116178

[2] CARRIER-INDUCED CHANGE IN REFRACTIVE-INDEX OF INP, GAAS, AND INGAASP [J].