Initial leakage current paths in the vertical-type GaN-on-GaN Schottky barrier diodes

被引：55

作者：

Sang, Liwen ^{[1
,2
]}

Ren, Bing ^{[1
]}

Sumiya, Masatomo ^{[3
]}

Liao, Meiyong ^{[3
]}

Koide, Yasuo ^{[2
,4
]}

Tanaka, Atsushi ^{[2
,4
]}

Cho, Yujin ^{[1
]}

Harada, Yoshitomo ^{[5
]}

Nabatame, Toshihide ^{[1
,2
]}

Sekiguchi, Takashi ^{[1
]}

Usami, Shigeyoshi ^{[4
]}

Honda, Yoshio ^{[4
]}

Amano, Hiroshi ^{[2
,4
]}

机构：

[1] Natl Inst Mat Sci, Int Ctr Mat Nanoarchitecton MANA, 1-1 Namiki, Tsukuba, Ibaraki 3050044, Japan

[2] Natl Inst Mat Sci, Amano Koide Collaborat Res Lab, 1-1 Namiki, Tsukuba, Ibaraki 3050044, Japan

[3] Natl Inst Mat Sci, Wide Bandgap Mat Grp, 1-1 Namiki, Tsukuba, Ibaraki 3050044, Japan

[4] Nagoya Univ, Inst Mat & Syst Sustainabil, Furo Cho C3-1, Nagoya, Aichi 4648601, Japan

[5] Hosei Univ, Koganei, Tokyo 1848584, Japan

来源：

APPLIED PHYSICS LETTERS | 2017年 / 111卷 / 12期

关键词：

D O I：

10.1063/1.4994627

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Electrical characteristics of leakage current paths in vertical-type n-GaN Schottky barrier diodes (SBDs) on free-standing GaN substrates are investigated by using photon emission microscopy (PEM). The PEM mapping shows that the initial failure of the SBD devices at low voltages is due to the leakage current paths from polygonal pits in the GaN epilayers. It is observed that these polygonal pits originate from carbon impurity accumulation to the dislocations with a screw-type component by microstructure analysis. For the SBD without polygonal pits, no initial failure is observed and the first leakage appeals at the edge of electrodes as a result of electric field concentration. The mechanism of leakage at pits is explained in terms of trap assisted tunneling through fitting current-voltage characteristics.

引用

页数：5

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