Excitation of Eu3+ in gallium nitride epitaxial layers: Majority versus trap defect center

被引：38

作者：

Woodward, N. ^{[1
]}

Poplawsky, J. ^{[1
]}

Mitchell, B. ^{[1
]}

Nishikawa, A. ^{[2
]}

Fujiwara, Y. ^{[2
]}

Dierolf, V. ^{[1
]}

机构：

[1] Lehigh Univ, Dept Phys, Bethlehem, PA 18015 USA

[2] Osaka Univ, Div Mat & Mfg Sci, Suita, Osaka 5650871, Japan

来源：

APPLIED PHYSICS LETTERS | 2011年 / 98卷 / 01期

基金：

日本学术振兴会; 美国国家科学基金会;

关键词：

D O I：

10.1063/1.3533806

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report studies of the excitation mechanism of Eu ions in situ doped during organometallic vapor-phase epitaxy (OMVPE) of GaN. We find that the bright red emission under above-band gap excitation originates primarily from an incorporation site that exhibits high excitation efficiency but occurs in low relative abundance (< 3%). The latter represents a device efficiency bottleneck, limiting the emission at high excitation intensities. The majority site, which scales well with the total Eu concentration, exhibits low energy transfer efficiency but dominates the emission under direct excitation in the visible spectral region due to high relative abundance (> 97%). (C) 2011 American Institute of Physics. [doi: 10.1063/1.3533806]

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页数：3

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