A New Plasma Source for Next Generation MEMS Deep Si Etching: Minimal Tilt, Improved Profile Uniformity and Higher Etch Rates

被引：21

作者：

Barnett, Richard ^{[1
]}

Thomas, Dave ^{[1
]}

Song, Yiping ^{[1
]}

Tossell, David ^{[1
]}

Barrass, Tony ^{[1
]}

Ansell, Oliver ^{[1
]}

机构：

[1] SPP Proc Technol Syst, Newport, Shrops, England

来源：

2010 PROCEEDINGS 60TH ELECTRONIC COMPONENTS AND TECHNOLOGY CONFERENCE (ECTC) | 2010年

关键词：

D O I：

10.1109/ECTC.2010.5490831

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The demand for evermore sensitive MEMS sensor devices, such as gyroscopes, has driven the need for the manufacturing processes to deliver smaller tolerances. This is especially evident when considering the DRIE process used to fabricate the intricate sensor features on the silicon wafer. Aspect ratios have become higher with CDs reducing and etch depths increasing. But of particular significance when referring to MEMS gyroscopes is profile tilt. Device design and signal processing can no longer compensate for innate tilt, and so the manufacturing methods have to improve to deliver the levels of tilt necessary for the next generation of devices at a cost effective throughput. This paper will describe data from a new plasma source design, the Pegasus Rapier, employed to improve the tilt performance of the Bosch DRIE process [1] for the productionisation of next generation MEMS gyroscopes. This data will show <+/-0.15 degrees profile tilt capability on 200mm wafers at rates of 7 mu m/min for a 20:1 aspect ratio trench.

引用

页码：1056 / 1059

页数：4