Scaling treatment of the random-field Ising model

被引:4
作者
Stinchcombe, RB [1 ]
Moore, ED [1 ]
DeQueiroz, SLA [1 ]
机构
[1] UNIV FED FLUMINENSE,INST FIS,BR-24210 NITEROI,RJ,BRAZIL
来源
EUROPHYSICS LETTERS | 1996年 / 35卷 / 04期
关键词
D O I
10.1209/epl/i1996-00569-0
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
Analytic phenomenological scaling is carried out for the random field Ising model in general dimensions d using a bar geometry. Domain wall configurations and their decorated profiles and associated wandering and other exponents (zeta,gamma,delta,mu) are obtained by free-energy minimization. Scaling between different bar widths provides the renormalization group (RG) transformation. Its consequences are i) criticality at h = T = 0 in d less than or equal to 2 with correlation length xi(h,T) diverging like xi(h,0) alpha h(-2/(2-d)) for d < 2 and xi(h,0) alpha exp[1/(c(1) gamma h(gamma))] for d = 2, where c(1) is a decoration constant; ii) criticality in d = 2 + epsilon dimensions at T = 0, h* = (epsilon/2c(1))(1/gamma), where xi alpha [(s - s*)/s](-2 epsilon/gamma), s drop h(gamma). Finite-temperature generalizations are outlined. Numerical transfer matrix calculations and results from a ground-state algorithm adapted for strips in d = 2 confirm the ingredients which provide the RG description.
引用
收藏
页码:295 / 300
页数:6
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