Critical Displacement of Host-Atoms for Amorphization in Germanium Induced by Arsenic Implantation

被引：3

作者：

Kawamura, Yoko ^{[1
]}

Shimizu, Yasuo ^{[1
]}

Oshikawa, Hiroyuki ^{[1
]}

Uematsu, Masashi ^{[1
]}

Haller, Eugene E. ^{[2
]}

Itoh, Kohei M. ^{[1
]}

机构：

[1] Keio Univ, Sch Fundamental Sci & Technol, Kohoku Ku, Yokohama, Kanagawa 2238522, Japan

[2] Univ Calif Berkeley, Lawrence Berkeley Lab, Berkeley, CA 94720 USA

来源：

APPLIED PHYSICS EXPRESS | 2010年 / 3卷 / 07期

基金：

日本科学技术振兴机构;

关键词：

ISOTOPE SUPERLATTICES; DOPANT DIFFUSION; SILICON; KINETICS; MOSFETS; DAMAGE;

D O I：

10.1143/APEX.3.071303

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We evaluated quantitatively the germanium (Ge) displacement induced by arsenic (As) implantation as a function of the depth from the sample surface both in the amorphous and single-crystalline regions using (70)Ge/(nat)Ge isotope superlattices (SLs). The profiles of (74)Ge in the Ge isotope SLs were measured by secondary ion mass spectrometry and the sample structure along the depth was observed by cross-sectional transmission electron microscopy. The critical Ge displacement for amorphization induced by As implantation is found to be 0.75 nm, which is independent of the implantation doses. This value is 50% larger than 0.5 nm for Si. (C) 2010 The Japan Society of Applied Physics

引用

页数：3

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