Current-voltage characteristics of graphene devices: Interplay between Zener-Klein tunneling and defects

被引：81
作者：
Vandecasteele, Niels [1 ,2 ]
Barreiro, Amelia [3 ]
Lazzeri, Michele [1 ,2 ]
Bachtold, Adrian [3 ]
Mauri, Francesco [1 ,2 ]
机构：
[1] Univ Paris 06, IPGP, IMPMC, F-75015 Paris, France
[2] Univ Paris 07, CNRS, F-75015 Paris, France
[3] CSIC, ICN, CIN2, E-08193 Barcelona, Spain
来源：
PHYSICAL REVIEW B | 2010年 / 82卷 / 04期
关键词：
FIELD-EFFECT TRANSISTORS;
D O I：
10.1103/PhysRevB.82.045416
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
We report a theoretical/experimental study of current-voltage characteristics (I-V) of graphene devices near the Dirac point. The I-V can be described by a power law (I alpha V(alpha) with 1 < alpha <= 1.5). The exponent is higher when the mobility is lower. This superlinear I-V is interpreted in terms of the interplay between Zener-Klein transport, that is tunneling between different energy bands, and defect scattering. Surprisingly, the Zener-Klein tunneling is made visible by the presence of defects.
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页数：10
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