Current-voltage characteristics of graphene devices: Interplay between Zener-Klein tunneling and defects

被引：82

作者：

Vandecasteele, Niels ^{[1
,2
]}

Barreiro, Amelia ^{[3
]}

Lazzeri, Michele ^{[1
,2
]}

Bachtold, Adrian ^{[3
]}

Mauri, Francesco ^{[1
,2
]}

机构：

[1] Univ Paris 06, IPGP, IMPMC, F-75015 Paris, France

[2] Univ Paris 07, CNRS, F-75015 Paris, France

[3] CSIC, ICN, CIN2, E-08193 Barcelona, Spain

来源：

PHYSICAL REVIEW B | 2010年 / 82卷 / 04期

关键词：

FIELD-EFFECT TRANSISTORS;

D O I：

10.1103/PhysRevB.82.045416

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We report a theoretical/experimental study of current-voltage characteristics (I-V) of graphene devices near the Dirac point. The I-V can be described by a power law (I alpha V(alpha) with 1 < alpha <= 1.5). The exponent is higher when the mobility is lower. This superlinear I-V is interpreted in terms of the interplay between Zener-Klein transport, that is tunneling between different energy bands, and defect scattering. Surprisingly, the Zener-Klein tunneling is made visible by the presence of defects.

引用

页数：10

共 35 条

[1] Magnetoconductance of carbon nanotube p-n junctions [J].

Andreev, A. V. .

PHYSICAL REVIEW LETTERS, 2007, 99 (24)

[2] Suppression of tunneling into multiwall carbon nanotubes -: art. no. 166801 [J].

Bachtold, A ;

de Jonge, M ;

Grove-Rasmussen, K ;

McEuen, PL ;

Buitelaar, M ;

Schönenberger, C .

PHYSICAL REVIEW LETTERS, 2001, 87 (16)

[3] Transport Properties of Graphene in the High-Current Limit [J].

Barreiro, Amelia ;

Lazzeri, Michele ;

Moser, Joel ;

Mauri, Francesco ;

Bachtold, Adrian .

PHYSICAL REVIEW LETTERS, 2009, 103 (07)

[4] Luttinger-liquid behaviour in carbon nanotubes [J].

Bockrath, M ;

Cobden, DH ;

Lu, J ;

Rinzler, AG ;

Smalley, RE ;

Balents, L ;

McEuen, PL .

NATURE, 1999, 397 (6720) :598-601

[5] The electronic properties of graphene [J].

Castro Neto, A. H. ;

Guinea, F. ;

Peres, N. M. R. ;

Novoselov, K. S. ;

Geim, A. K. .

REVIEWS OF MODERN PHYSICS, 2009, 81 (01) :109-162

[6] Selective transmission of Dirac electrons and ballistic magnetoresistance of n-p junctions in graphene [J].

Cheianov, Vadim V. ;

Fal'ko, Vladimir I. .

PHYSICAL REVIEW B, 2006, 74 (04)

[7] Charged-impurity scattering in graphene [J].

Chen, J. -H. ;

Jang, C. ;

Adam, S. ;

Fuhrer, M. S. ;

Williams, E. D. ;

Ishigami, M. .

NATURE PHYSICS, 2008, 4 (05) :377-381

[8] Intrinsic and extrinsic performance limits of graphene devices on SiO2 [J].

Chen, Jian-Hao ;

Jang, Chaun ;

Xiao, Shudong ;

Ishigami, Masa ;

Fuhrer, Michael S. .

NATURE NANOTECHNOLOGY, 2008, 3 (04) :206-209

[9]

Datta S., 2013, Quantum Transport: atom to Transistor

[10] Nonlinear electric transport in graphene: Quantum quench dynamics and the Schwinger mechanism [J].

Dora, Balazs ;

Moessner, Roderich .

PHYSICAL REVIEW B, 2010, 81 (16)

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