Performance test of amorphous silicon modules in different climates -: Year three:: Higher minimum operating temperatures lead to higher performance levels

被引:14
作者
Rüther, R [1 ]
Tamizh-Mani, G [1 ]
del Cueto, J [1 ]
Adelstein, J [1 ]
Dacoregio, MM [1 ]
von Roedern, B [1 ]
机构
[1] Univ Fed Santa Catarina, LabEEE, Dept Civil Engn, BR-88040900 Florianopolis, SC, Brazil
来源
Conference Record of the Thirty-First IEEE Photovoltaic Specialists Conference - 2005 | 2005年
关键词
D O I
10.1109/PVSC.2005.1488459
中图分类号
TE [石油、天然气工业]; TK [能源与动力工程];
学科分类号
0807 ; 0820 ;
摘要
This paper presents third year results of a round robin exposure experiment designed to assess the performance of thin-film amorphous silicon (a-Si) solar modules operating in different climatic conditions. Three identical sets of commercially available a-Si PV modules from five different manufacturers were simultaneously deployed outdoors in three sites with distinct climates (Arizona-USA, Colorado - USA and Florianopolis - Brazil). Every year all PV module sets were sent to the National Renewable Energy Laboratory (NREL) for Standard Testing Conditions measurements under a SPIRE simulator. The four-year experiment aims to determine the light-induced degradation and stabilization characteristics of a-Si regarding specific history of exposure, and to monitor and compare degradation rates in different climates. We present results from the first three years of measurements, showing that while most of the manufacturers underrate their products by 20 to 25% to account for the light-induced degradation, outdoor exposure temperature seems to be what will ultimately determine the stabilized performance level of a-Si.
引用
收藏
页码:1635 / 1638
页数:4
相关论文
共 10 条
[1]  
del Cueto JA, 1999, PROG PHOTOVOLTAICS, V7, P101, DOI 10.1002/(SICI)1099-159X(199903/04)7:2<101::AID-PIP247>3.0.CO
[2]  
2-2
[3]  
RUTHER R, 2003, 3 WORLD C PV EN CONV, P3091
[4]  
RUTHER R, 2004, 19 EUR PV SOL EN C P, P1617
[5]  
Ruther R., 2003, 3 WORLD C PV EN CONV, P501
[6]  
RUTHER R, 1999, INT SOL EN SOC 1999, P221
[7]  
Ruther R., 1995, SOLAR ENERGY MAT SOL, V36, P29
[8]   REVERSIBLE CONDUCTIVITY CHANGES IN DISCHARGE-PRODUCED AMORPHOUS SI [J].
STAEBLER, DL ;
WRONSKI, CR .
APPLIED PHYSICS LETTERS, 1977, 31 (04) :292-294
[9]  
VONROEDERN B, 1996, 14 NREL SNL PV PROGR, P313
[10]  
ZWEIBEL K, 2004, PHOTON INT OCT, P48