The oxidation and the electrical properties of Ni-Cr thin film after rapid thermal annealing

被引：5

作者：

Yan, Jianwu ^{[1
,2
]}

Zhou, Jicheng ^{[1
]}

机构：

[1] Cent S Univ, Sch Phys Sci & Technol, Changsha 410083, Peoples R China

[2] NanChang Inst Technol, Dept Mech & Power Engn, Nanchang 330099, Peoples R China

来源：

INTERNATIONAL JOURNAL OF MODERN PHYSICS B | 2007年 / 21卷 / 26期

基金：

中国国家自然科学基金;

关键词：

magnetron sputtering; Ni-Cr thin film; rapid thermal annealing; TCR; oxidation;

D O I：

10.1142/S0217979207037934

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

By controlling the sputtering power, rotational speed of the substrate and sputtering time, Ni-Cr thin films with appropriate composition were fabricated by double-target magnetron co-sputtering techniques. The homogeneity and oxidation of Ni-Cr thin film has been studied by Auger electron spectroscopy (AES). The structures of Ni-Cr thin films were determined by an X-ray diffractometer (XRD). The oxidation and the resistance stability of the Ni-Cr thin film after rapid thermal process (RTP) have been studied. The relations between TCR and RTP techniques of Ni-Cr thin films were discussed.

引用

页码：4561 / 4574

页数：14

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