Fluoride resonant tunneling diodes on Si substrates improved by additional thermal oxidation process

被引：19
作者：
Watanabe, S [1 ]
Maeda, M [1 ]
Sugisaki, T [1 ]
Tsutsui, K [1 ]
机构：
[1] Tokyo Inst Technol, Interdisciplinary Grad Sch Sci & Engn, Midori Ku, Yokohama, Kanagawa 2268502, Japan
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | 2005年 / 44卷 / 4B期
关键词：
resonant tunneling diode; RTD; fluoride; CaF2; CdF2; Si; oxidation process;
D O I：
10.1143/JJAP.44.2637
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
An oxidation process was applied to the fabrication of fluoride resonant tunneling diodes (RTDs) on Si substrates. The oxidation process was carried out after the growth of an ultrathin CaF2 layer on Si, and expected to passivate the Si surface in a pinholes generated in the CaF2 layer. Leakage currents of Au/Al/CaF2/Si(111) metal insulator semiconductor (MIS) diodes were extremely reduced by introducing this process. Au/Al/CaF2/CdF2/CaF2 /Si(111) double-barrier RTDs were also fabricated by introducing this process, the leakage currents of which were extremely reduced and a very large peak to valley current ratio (PVCR) of 1500 was obtained. It was also shown that the chemical reaction between a CdF2 well layer and the Si substrate was suppressed by the oxidation process. Owing to this effect, hi.-h-temperature growth (up to 300 degrees C) of the CdF2 well layer was realized for the first time in the fluoride RTDs, and resulted in the reduction of undesirable current drift.
引用
收藏
页码：2637 / 2641
页数：5
相关论文
共 13 条
[1]   Resonant tunneling characteristics in SiO2/Si double-barrier structures in a wide range of applied voltage [J].
Ikeda, H ;
Iwasaki, M ;
Ishikawa, Y ;
Tabe, M .
APPLIED PHYSICS LETTERS, 2003, 83 (07) :1456-1458
[2]   STUDY OF BAND OFFSETS IN CDF2/CAF2/SI(111) HETEROSTRUCTURES USING X-RAY PHOTOELECTRON-SPECTROSCOPY [J].
IZUMI, A ;
HIRAI, Y ;
TSUTSUI, K ;
SOKOLOV, NS .
APPLIED PHYSICS LETTERS, 1995, 67 (19) :2792-2794
[3]   CdF2/CaF2 resonant tunneling diode fabricated on Si(111) [J].
Izumi, A ;
Matsubara, N ;
Kushida, Y ;
Tsutsui, K ;
Sokolov, NS .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1997, 36 (3B) :1849-1852
[4]  
Maeda M, 2003, JPN J APPL PHYS 1, V42, P2453, DOI [10.1143/JJAP.42.2453, 10.1143/JJAP.42.2453.1]
[5]   Evaluation of variable energy level of conduction band edge on fluoride resonant tunneling diodes [J].
Maeda, M ;
Watanabe, S ;
Tsutsui, K .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 2003, 42 (10A) :L1216-L1218
[6]   The scaled performance of Si/Si1-xGex resonant tunneling diodes [J].
See, P ;
Paul, DJ .
IEEE ELECTRON DEVICE LETTERS, 2001, 22 (12) :582-584
[7]   Fabrication of resonance tunnel diode by γ-Al2O3/Si multiple heterostructures [J].
Shahjahan, M ;
Koji, Y ;
Sawada, K ;
Ishida, M .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 2002, 41 (4B) :2602-2605
[8]   Electron resonant tunneling with a high peak-to-valley ratio at room temperature in Si1-xGex/Si triple barrier diodes [J].
Suda, Y ;
Koyama, H .
APPLIED PHYSICS LETTERS, 2001, 79 (14) :2273-2275
[9]   Fluoride resonant Tunneling diodes co-integrated with Si-MOSFETs [J].
Terayama, T ;
Sekine, H ;
Tsutsui, K .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 2002, 41 (4B) :2598-2601
[10]   TUNNELING IN A FINITE SUPERLATTICE [J].
TSU, R ;
ESAKI, L .
APPLIED PHYSICS LETTERS, 1973, 22 (11) :562-564
12