Growth of ZnO nanorods from Zn and Zn-Zn3N2 films

被引：0
|
作者：
Toumiat, A. [1 ,2 ]
Zerkout, S. [1 ,3 ]
Achour, S. [1 ]
Tabet, N. [4 ]
Guarbous, L. [5 ]
机构：
[1] Mentouri Univ, Constantine Ceram Lab, Constantine 25000, Algeria
[2] Unite Dev Technol Silicium, Algiers 16200, Algeria
[3] Elect Tech Dept, Skikda 21000, Algeria
[4] King Fahd Univ Petr & Minerals, Surface Sci Lab, Dhahran, Saudi Arabia
[5] Ctr Rech Nucl, Algiers 16000, Algeria
来源：
NANOTECHNOLOGY AND ITS APPLICATIONS | 2007年 / 929卷
关键词：
ZnO nanorods; Zn3N2; photoluminescence;
D O I：
暂无
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
This work reports on the growth of ZnO nanorods by simple thermal oxidation under air at 500 C of Zn and/or Zn-Zn3N2 precursors thin films. These films were deposited by reactive magnetron sputtering in argon atmosphere for Zn films and in a mixture of Ar - N-2 for Zn-Zn3N2. X-Rays diffraction (XRD) patterns of the precursors films showed the formation of both Zn and Zn3N2 phases before oxidation. However, after oxidation, X-ray Photoelectron Spectroscopy (XPS) analysis revealed the disappearance of Zn3N2 phase. This method allowed us to prepare high-density ZnO nanorods by oxidizing Zn-Zn3N2 precursor films. Scanning Electron Microscopy (SEM) investigations revealed that the films prepared from Zn-Zn3N2 showed higher density of nanorods and stronger photoluminescence with several mode phonon replicas at room temperature.
引用
收藏
页码：59 / +
页数：2
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