Application of infrared interferometry for quantitative analysis of chemical groups grafted onto the internal surface of porous silicon nanostructures

被引:25
作者
Alekseev, S. A.
Lysenko, V.
Zaitsev, V. N.
Barbier, A.
机构
[1] Kiev Natl Taras Shevchenko Univ, Dept Chem, UA-01033 Kiev, Ukraine
[2] INSA Lyon, CNRS, UMR 5270, Lyon Inst Nanotechnol, F-69621 Villeurbanne, France
关键词
D O I
10.1021/jp0712452
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
The internal surface of porous silicon (PS) nanostructures was chemically modified by octadecyl and carboxylic acid groups by applying the hydrosilylation reaction as well as by aminopropyl and vinyl groups applying the silanization reaction. Concentrations of the chemically grafted groups and thicknesses of grafted layers were determined by measurements of PS refractive index in the infrared spectral range. The Landau -Lifshitz-Looyenga effective media model was used to relate the measured refractive index values to a volume fraction and then to the concentration of the grafted groups. The described quantitative method was applied to determine the sensitivity limits of PS-based sensing devices.
引用
收藏
页码:15217 / 15222
页数:6
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