High rate deposition of highly stable a-Si:H films using multi-hollow discharges for thin films solar cells

被引：32
作者：
Nakamura, William Makoto [1 ]
Matsuzaki, Hidefumi [1 ]
Sato, Hiroshi [1 ]
Kawashima, Yuuki [1 ]
Koga, Kazunori [1 ]
Shiratani, Masaharu [1 ]
机构：
[1] Kyushu Univ, Dept Elect, Fukuoka 8190395, Japan
来源：
SURFACE & COATINGS TECHNOLOGY | 2010年 / 205卷
关键词：
Multi-hollow discharge plasma CVD; a-Si:H solar cell; Deposition rate; Light-induced degradation; CHEMICAL-VAPOR-DEPOSITION; AMORPHOUS-SILICON; H FILMS; FREQUENCY DISCHARGES; VOLUME FRACTION; PLASMA; CLUSTERS; GROWTH; SIH3;
D O I：
10.1016/j.surfcoat.2010.07.081
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
We developed a multi-hollow discharge plasma chemical vapor deposition (CVD) method to deposit a-Si:H films of high stability against light exposure for solar cell applications. This method suppresses incorporation of clusters, which are formed in discharges, into films; and such a-Si:H films without cluster incorporation show high stability against light exposure. Aiming at increasing the deposition rate, we have developed a honeycomb type electrode with more than double number of holes, and we have realized deposition of highly stable a-Si:H films of 4.7 x 10(15) cm(-3) in stabilized defect density at a rate of 3.0 nm/s and better film thickness uniformity within 5% in an area of 4 cm in diameter. (C) 2010 Elsevier B.V. All rights reserved.
引用
收藏
页码：S241 / S245
页数：5
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