First-principles study of Ga-vacancy induced magnetism in β-Ga2O3

被引:19
作者
Yang, Ya [1 ,2 ]
Zhang, Jihua [3 ]
Hu, Shunbo [4 ]
Wu, Yabei [1 ,2 ]
Zhang, Jincang [1 ,2 ,4 ]
Ren, Wei [1 ,2 ,4 ]
Cao, Shixun [1 ,2 ,4 ]
机构
[1] Shanghai Univ, Mat Genome Inst, Dept Phys, Shanghai 200444, Peoples R China
[2] Shanghai Univ, Mat Genome Inst, Int Ctr Quantum & Mol Struct, Shanghai 200444, Peoples R China
[3] Guizhou Educ Univ, Guizhou Prov Key Lab Computat Nanomat Sci, Guiyang 550018, Guizhou, Peoples R China
[4] Shanghai Mat Genome Inst, Shanghai 200444, Peoples R China
基金
中国国家自然科学基金;
关键词
GENERALIZED GRADIENT APPROXIMATION; OPTICAL-PROPERTIES; OXYGEN VACANCIES; SURFACE; DEFECTS; SOLIDS; OXIDE;
D O I
10.1039/c7cp03675b
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
First principles calculations based on density functional theory were performed to study the electronic structure and magnetic properties of beta-Ga2O3 in the presence of cation vacancies. We investigated two kinds of Ga vacancies at different symmetry sites and the consequent structural distortion and defect states. We found that both the six-fold coordinated octahedral site and the four-fold coordinated tetrahedral site vacancies can lead to a spin polarized ground state. Furthermore, the calculation identified a relationship between the spin polarization and the charge states of the vacancies, which might be explained by a molecular orbital model consisting of uncompensated O2- 2p dangling bonds. The calculations for the two vacancy systems also indicated a potential long-range ferromagnetic order which is beneficial for spintronics application.
引用
收藏
页码:28928 / 28935
页数:8
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