Contactless electroreflectance and piezoreflectance of a two-dimensional electron gas at a GaN/AlGaN heterointerface

被引：18
|
作者：
Lin, DY
Huang, YS [1 ]
Chen, YF
Tiong, KK
机构：
[1] Natl Taiwan Univ Sci & Technol, Dept Elect Engn, Taipei 106, Taiwan
[2] Natl Taiwan Univ, Dept Phys, Taipei 106, Taiwan
[3] Natl Taiwan Ocean Univ, Dept Elect Engn, Keelung 202, Taiwan
来源：
SOLID STATE COMMUNICATIONS | 1998年 / 107卷 / 10期
关键词：
heterojunctions; semiconductors; optical properties;
D O I：
10.1016/S0038-1098(98)00274-9
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
We have measured the contactless electroreflectance and piezoreflectance spectra at 300 and 20 K from a GaN/AlGaN heterojunction structure grown by metalorganic chemical vapor deposition on 6H-SiC substrate. The features related to a two-dimensional electron gas confined at the GaN/AlGaN heterojunction are observed and the origin and nature of these features are discussed. (C) 1998 Elsevier Science Ltd. All rights reserved.
引用
收藏
页码：533 / 536
页数：4
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