Contactless electroreflectance and piezoreflectance of a two-dimensional electron gas at a GaN/AlGaN heterointerface

被引：18

作者：

Lin, DY

Huang, YS ^{[1
]}

Chen, YF

Tiong, KK

机构：

[1] Natl Taiwan Univ Sci & Technol, Dept Elect Engn, Taipei 106, Taiwan

[2] Natl Taiwan Univ, Dept Phys, Taipei 106, Taiwan

[3] Natl Taiwan Ocean Univ, Dept Elect Engn, Keelung 202, Taiwan

来源：

SOLID STATE COMMUNICATIONS | 1998年 / 107卷 / 10期

关键词：

heterojunctions; semiconductors; optical properties;

D O I：

10.1016/S0038-1098(98)00274-9

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

We have measured the contactless electroreflectance and piezoreflectance spectra at 300 and 20 K from a GaN/AlGaN heterojunction structure grown by metalorganic chemical vapor deposition on 6H-SiC substrate. The features related to a two-dimensional electron gas confined at the GaN/AlGaN heterojunction are observed and the origin and nature of these features are discussed. (C) 1998 Elsevier Science Ltd. All rights reserved.

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页码：533 / 536

页数：4

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