A Quad-Band GSM/GPRS/EDGE SoC in 65nm CMOS

被引:1
作者
Darabi, H. [1 ]
Chang, P. [1 ]
Jensen, H. [1 ]
Zolfaghari, A. [1 ]
Leete, J. [1 ]
Mohammadi, B. [1 ]
Chiu, J. [1 ]
Li, T. [1 ]
Chen, X. [1 ]
Zhou, Z. [1 ]
Vadipour, M. [1 ]
Chen, C. [1 ]
Chang, Y. [1 ]
Mirzaei, A. [1 ]
Yazdi, A. [1 ]
Nariman, M. [1 ]
Hadji, A. [1 ]
Lettieri, P. [1 ]
Chang, E. [1 ]
Zhao, B. [1 ]
Juan, K. [1 ]
Suri, P. [1 ]
Guan, C. [1 ]
Serrano, L. [1 ]
Leung, J. [1 ]
Shin, J. [1 ]
Kim, J. [1 ]
Tran, H. [1 ]
Kilcoyne, P. [1 ]
Vinh, H. [1 ]
Raith, E. [1 ]
Koscal, M. [1 ]
Hukkoo, A. [1 ]
Hayek, C. [1 ]
Rakhshani, V. [1 ]
Wilcoxson, C. [1 ]
Rofougaran, M. [1 ]
Rofougaran, A. [1 ]
机构
[1] Broadcom Corp, Irvine, CA USA
来源
2010 SYMPOSIUM ON VLSI CIRCUITS, DIGEST OF TECHNICAL PAPERS | 2010年
关键词
D O I
10.1109/VLSIC.2010.5560281
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
A quad-band 2.5G SoC integrates all the RF, DSP, ARM, audio and other baseband processing functions into a single 65nm CMOS die. The radio draws a battery current of 49mA in the RX-mode, and 86mA in the GMSK TX-mode. The low-IF receiver achieves a sensitivity of -110dBm at the antenna, corresponding to a noise figure of 2.4dB at the device input. The 8PSK +/- 400kHz modulation mask is -64.1/62.7dBc for high/low bands, with an RMS EVM of 2.45/1.95%.
引用
收藏
页码:89 / 90
页数:2
相关论文
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Li Puma Giuseppe, 2008, 2008 IEEE International Solid-State Circuits Conference - Digest of Technical Papers, P210, DOI 10.1109/ISSCC.2008.4523131
[2]  
PULLELA R, 2009, IEEE INT SOL STAT CI, P112
[3]  
Staszewski R. B., 2008, IEEE INT SOL STAT CI, P208