Analysis to Optimize Sensitivity of RF Energy Harvester with Voltage Boost Circuit

被引：0
|
作者：
Luo, Dan [1 ]
Fuketa, Hiroshi [1 ]
Matsunaga, Kenichi [2 ]
Morimura, Hiroki [2 ]
Takamiya, Makoto [1 ]
Sakurai, Takayasu [1 ]
机构：
[1] Univ Tokyo, Inst Ind Sci, Meguro Ku, 4-6-1 Komaba, Tokyo 1538505, Japan
[2] NTT Corp, NTT Device Technol Labs, Tokyo, Tokyo, Japan
来源：
2015 EUROPEAN CONFERENCE ON CIRCUIT THEORY AND DESIGN (ECCTD) | 2015年
关键词：
Energy harvester; Voltage booster; Modeling; Subthreshold slope; Optimization;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Analytical theory and simulation-based analysis for optimizing sensitivity of RF energy harvester are discussed. A target harvester is a widely-used MOSFET Dickson charge-pump harvester from a small-signal RF power with a voltage booster at the front end. Charging time is also analyzed. Derived expressions show good match with simulation results. The results provide an insight for design optimization based on circuit and device parameters.
引用
收藏
页码：61 / 64
页数：4
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