Characterization of bismuth nanospheres deposited by plasma focus device

被引:18
作者
Ahmad, M. [1 ]
Al-Hawat, Sh. [2 ]
Akel, M. [2 ]
Mrad, O. [3 ]
机构
[1] Atom Energy Commiss Syria, Dept Chem, IBA Lab, Damascus, Syria
[2] Atom Energy Commiss Syria, Dept Phys, Damascus, Syria
[3] Atom Energy Commiss Syria, Dept Chem, Damascus, Syria
关键词
LARGE MAGNETORESISTANCE; ELECTRICAL-PROPERTIES; FILMS; BI; TEMPERATURE; NANOWIRES; TRANSITION; THICKNESS; GROWTH; BI2O3;
D O I
10.1063/1.4907579
中图分类号
O59 [应用物理学];
学科分类号
摘要
A new method for producing thin layer of bismuth nanospheres based on the use of low energy plasma focus device is demonstrated. Various techniques such as scanning electron microscopy, Rutherford backscattering spectroscopy, X-ray diffraction, X-ray photoelectron spectroscopy, and Raman spectroscopy have been used to characterize the morphology and the composition of the nanospheres. Experimental parameters may be adjusted to favour the formation of bismuth nanospheres instead of microspheres. Therefore, the formation of large surface of homogeneous layer of bismuth nanospheres with sizes of below 100 nm can be obtained. The natural snowball phenomenon is observed to be reproduced in nanoscale where spheres roll over the small nanospheres and grow up to bigger sizes that can reach micro dimensions. The comet-like structure, a reverse phenomenon to snowball is also observed. (C) 2015 AIP Publishing LLC.
引用
收藏
页数:9
相关论文
共 42 条
[1]   Porous Structure Formation on Silicon Surface Treated by Plasma Focus Device [J].
Ahmad, M. ;
Al-Hawat, Sh ;
Akel, M. .
JOURNAL OF FUSION ENERGY, 2013, 32 (04) :471-478
[2]   Thickness dependent surface microstructure evolution of bismuth thin film prepared by molecular beam deposition method [J].
Ahn, Youngkun ;
Kim, Young-Hwan ;
Kim, Seong-Il ;
Jeong, Kwang-Ho .
CURRENT APPLIED PHYSICS, 2012, 12 (06) :1518-1522
[3]  
[Anonymous], 1979, Handbook of XRay photoelectron spectroscopy
[4]   Molecular oxygen interaction with Bi2O3:: a spectroscopic and spectromagnetic investigation [J].
Barreca, D ;
Morazzoni, F ;
Rizzi, GA ;
Scotti, R ;
Tondello, E .
PHYSICAL CHEMISTRY CHEMICAL PHYSICS, 2001, 3 (09) :1743-1749
[5]   Synthesis of bismuth micro- and nanospheres by a simple refluxing method [J].
Cheng, Gang ;
Wu, Jiliang ;
Xiao, Feng ;
Yu, Hui ;
Lu, Zhong ;
Yu, Xianglin ;
Chen, Rong .
MATERIALS LETTERS, 2009, 63 (26) :2239-2242
[6]   Stress-induced growth of bismuth nanowires [J].
Cheng, YT ;
Weiner, AM ;
Wong, CA ;
Balogh, MP ;
Lukitsch, MJ .
APPLIED PHYSICS LETTERS, 2002, 81 (17) :3248-3250
[7]   A study of the size effect on the temperature-dependent resistivity of bismuth nanowires with rectangular cross-sections [J].
Chiu, P ;
Shih, I .
NANOTECHNOLOGY, 2004, 15 (11) :1489-1492
[8]   Finite-size effects in the electrical transport properties of single bismuth nanowires [J].
Cornelius, T. W. ;
Toimil-Molares, M. E. ;
Neumann, R. ;
Karim, S. .
JOURNAL OF APPLIED PHYSICS, 2006, 100 (11)
[9]   EFFECTS OF BI2O3 DISSOCIATION ON THE ELECTRICAL-PROPERTIES OF THERMALLY EVAPORATED-FILMS OF BISMUTH OXIDE [J].
DHARMADHIKARI, VS ;
GOSWAMI, A .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1983, 1 (02) :383-387
[10]   Bismuth nanowires for thermoelectric applications [J].
Dresselhaus, MS ;
Lin, YM ;
Rabin, O ;
Dresselhaus, G .
MICROSCALE THERMOPHYSICAL ENGINEERING, 2003, 7 (03) :207-219