Growth and characterization of low-temperature grown GaN with high Fe doping

被引：73

作者：

Akinaga, H

Németh, S

De Boeck, J

Nistor, L

Bender, H

Borghs, G

Ofuchi, H

Oshima, M

机构：

[1] IMEC, B-3001 Louvain, Belgium

[2] Univ Tokyo, Grad Sch Engn, Bunkyo Ku, Tokyo 1138656, Japan

[3] Univ Antwerp, RUCA, B-2020 Antwerp, Belgium

[4] Natl Inst Mat Phys, Bucharest 76900, Romania

来源：

APPLIED PHYSICS LETTERS | 2000年 / 77卷 / 26期

关键词：

D O I：

10.1063/1.1335547

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We succeeded in growing highly Fe-doped GaN films by solid-source molecular beam epitaxy using an electron-cyclotron-resonance microwave nitrogen plasma. The substrate temperature was in the range of 380-520 degreesC. The samples were analyzed by x-ray diffraction and transmission electron microscopy, and showed hexagonal (wurtzite) or cubic (zincblende) structure or a mixture of both phases. The Fe concentration was on the order of 10(19) cm(-3) and extended x-ray absorption fine structure data show that the Fe is substituting the Ga in GaN. The magnetization measurements as a function of temperature reveal ferromagnetic properties below 100 K for the sample grown at the lowest temperature. (C) 2000 American Institute of Physics. [S0003- 6951(01)00601-5].

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页码：4377 / 4379

页数：3

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