Quasi van der Waals epitaxy of ZnSe on the layered chalcogenides InSe and GaSe

被引：26
|
作者：
Wisotzki, E [1 ]
Klein, A [1 ]
Jaegermann, W [1 ]
机构：
[1] Tech Univ Darmstadt, Dept Mat Sci, Div Surface Sci, D-64287 Darmstadt, Germany
来源：
THIN SOLID FILMS | 2000年 / 380卷 / 1-2期
关键词：
van der Waals epitaxy; ZnSe; layered chalcogenides;
D O I：
10.1016/S0040-6090(00)01520-0
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
ZnSe has been grown on van der Waals surfaces of the layered chalcogenides InSe and GaSe. Its growth morphology, epitaxial relation and electronic band lineup were studied using XPS, UPS, LEED and HRSEM. The II-VI materials showed a strong tendency to form clusters on the low energy van der Waals surfaces. LEED measurements showed a ZnSe(111)/Ga(In)Se(0001) epitaxial relation with strong facetting of the II-VI clusters deposited on GaSe. There was no evidence for a reaction layer between substrate and film, as deduced from UPS and XPS measurements. The band lineups for the ZnSe/InSe and ZnSe/GaSe heterointerface have been determined. (C) 2000 Elsevier Science B.V. All rights reserved.
引用
收藏
页码：263 / 265
页数：3
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