TIBERCAD: A new multiscale simulator for electronic and optoelectronic devices

被引:6
作者
Auf der Maur, M. [1 ]
Povolotskyi, M. [1 ]
Sacconi, F. [1 ]
Di Carlo, A. [1 ]
机构
[1] Univ Roma Tor Vergata, I-00133 Rome, Italy
关键词
CAD; simulation; multiscale; drift-diffusion; strain;
D O I
10.1016/j.spmi.2007.03.011
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
In the last years GaN-based heterostructures have attracted much attention for their application as optoelectronic devices. The strain due to lattice mismatch of the constituent materials plays a crucial role in the behaviour of these structures, especially if they are of reduced dimensions, as e.g. nanocolumns. We show an implementation of a new device simulator which accounts for strain-related effects and quantum mechanical properties and couples them with the transport of the quasi-particles in the system. Simulations of an AlGaN/GaN nanocolumn LED are reported as an example. (c) 2007 Elsevier Ltd. All rights reserved.
引用
收藏
页码:381 / 385
页数:5
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