High mobility bottom gate nanocrystalline-Si thin-film transistors

被引：11
作者：
Hara, Masaki [1 ]
机构：
[1] Sony Corp, Kanagawa 243002L, Japan
来源：
THIN SOLID FILMS | 2011年 / 519卷 / 11期
关键词：
Bottom gate; Thin-film transistor; Inductively-coupled plasma; High-definition television; Organic light-emitting diode; Nanocrystalline silicon; Chemical vapor deposition; MICROCRYSTALLINE SILICON FILM; DEPOSITION;
D O I：
10.1016/j.tsf.2011.01.283
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
We developed high mobility bottom gate nanocrystalline (nc)-Si thin-film transistors (TFTs). nc-Si film was deposited using inductively coupled plasma chemical vapor deposition method on SiNx gate insulator. Because of good film crystallinity and low ion damage, we could get high performance TFT characteristics. Our TFT showed field effect mobility of 9.4 cm(2) V-1 s(-1) for electrons. These results showed that bottom gate nc-Si TFT could be used in applications such as next generation high definition television and organic light-emitting diode display. (C) 2011 Elsevier B.V. All rights reserved.
引用
收藏
页码：3922 / 3924
页数：3
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