Simulations for structural properties and crystal growth on Si(001) surface

被引：3
作者：
Terakura, K [1 ]
Uda, T [1 ]
Yamasaki, T [1 ]
Miyazaki, T [1 ]
机构：
[1] JOINT RES CTR ATOM TECHNOL, ANGSTROM TECHNOL PARTNERSHIP, TSUKUBA, IBARAKI 305, JAPAN
来源：
SURFACE SCIENCE | 1996年 / 357卷 / 1-3期
关键词：
density functional calculations; growth; low index single crystal surfaces; molecular beam epitaxy; semiconducting surfaces; silicon; surface defects; surface diffusion;
D O I：
10.1016/0039-6028(96)00187-2
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
Novel structure models for the so-called C-type defect on Si(001) surfaces are proposed, The key idea in the models is a missing Si atom in the, second surface layer, The proposed models are locally very stable and give STM images consistent with the observed one, The second subject is the analysis on the initial processes of the homoepitaxial crystal growth on Si(001) surfaces. The stability of several ad-Si atom clusters and the activation energies for some elementary processes are discussed.
引用
收藏
页码：394 / 401
页数：8
相关论文
共 31 条
  • [1] ORDERED-DEFECT MODEL FOR SI(001)-(2X8)
    ARUGA, T
    MURATA, Y
    [J]. PHYSICAL REVIEW B, 1986, 34 (08): : 5654 - 5657
  • [2] STM STUDIES OF SI(100)-2 X-1 OXIDATION - DEFECT CHEMISTRY AND SI EJECTION
    AVOURIS, P
    CAHILL, DG
    [J]. ULTRAMICROSCOPY, 1992, 42 : 838 - 844
  • [3] SI BINDING AND NUCLEATION ON SI(100)
    BEDROSSIAN, PJ
    [J]. PHYSICAL REVIEW LETTERS, 1995, 74 (18) : 3648 - 3651
  • [4] BINDING AND DIFFUSION OF A SI ADATOM ON THE SI(100) SURFACE
    BROCKS, G
    KELLY, PJ
    CAR, R
    [J]. PHYSICAL REVIEW LETTERS, 1991, 66 (13) : 1729 - 1732
  • [5] ADSORPTION OF AL ON SI(100) - A SURFACE POLYMERIZATION REACTION
    BROCKS, G
    KELLY, PJ
    CAR, R
    [J]. PHYSICAL REVIEW LETTERS, 1993, 70 (18) : 2786 - 2789
  • [6] THE ENERGETICS OF ADATOMS ON THE SI(100) SURFACE
    BROCKS, G
    KELLY, PJ
    CAR, R
    [J]. SURFACE SCIENCE, 1992, 269 : 860 - 866
  • [7] DIJKKAMP D, 1992, ORDERING SURFACES IN, P85
  • [8] DETERMINATION OF THE LOCAL ELECTRONIC-STRUCTURE OF ATOMIC-SIZED DEFECTS ON SI(001) BY TUNNELING SPECTROSCOPY
    HAMERS, RJ
    KOHLER, UK
    [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1989, 7 (04): : 2854 - 2859
  • [9] ORDER-DISORDER PHASE-TRANSITION ON THE SI(001) SURFACE - CRITICAL ROLE OF DIMER DEFECTS
    INOUE, K
    MORIKAWA, Y
    TERAKURA, K
    NAKAYAMA, M
    [J]. PHYSICAL REVIEW B, 1994, 49 (20): : 14774 - 14777
  • [10] INOUE K, 1993, SPRINGER SERIES SOLI, V114, P77
1234