InP-based quantum dash lasers for wide gain bandwidth applications

被引：17

作者：

Deubert, S ^{[1
]}

Somers, A ^{[1
]}

Kaiser, W ^{[1
]}

Schwertberger, R ^{[1
]}

Reithmaier, JP ^{[1
]}

Forchel, A ^{[1
]}

机构：

[1] Univ Wurzburg, Inst Phys, D-97074 Wurzburg, Germany

来源：

JOURNAL OF CRYSTAL GROWTH | 2005年 / 278卷 / 1-4期

关键词：

low-dimensional structures; self-organized growth; molecular beam epitaxy; quantum dashes; semiconducting III-V materials; laser diodes;

D O I：

10.1016/j.jcrysgro.2005.01.041

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Self-assembled quantum dash (QDash) lasers based on InP with an emission wavelength of about 1.5 mu m were grown by molecular beam epitaxy with solid-state sources. Two different approaches were investigated to further extend the broad gain bandwidth of QDash structures. One approach is based on layer thickness variations in a stacked QDash structure with thick barriers to avoid vertical strain coupling. In the alternative structure, the barrier thickness is reduced to allow strain coupling which modifies automatically the QDash size from layer to layer. With both approaches, the gain bandwidth could be significantly increased in comparison to structures with a single QDash layer. However, lasers based on active regions with reduced barrier widths show additionally a significant improvement of the device performance. Ridge waveguide lasers based on this new material show continuous wave (cw) operation up to 75 degrees C. At 20 degrees C, a threshold current of 65 mA was obtained for 2 mm long devices with 2.5 mu m wide ridges. (c) 2005 Elsevier B.V. All rights reserved.

引用

页码：346 / 350

页数：5

共 12 条

[1] 2.0 μm wavelength InAs quantum dashes grown on a GaAs substrate using a metamorphic buffer layer [J].