Growth rate enhancement of (0001)-face silicon-carbide oxidation in thin oxide regime

被引：34

作者：

Yamamoto, Takeshi ^{[1
]}

Hijikata, Yasuto ^{[1
]}

Yaguchi, Hiroyuki ^{[1
]}

Yoshida, Sadafumi ^{[1
]}

机构：

[1] Saitama Univ, Div Math Elect & Informat, Grad Sch Sci & Engn, Sakura Ku, Urawa, Saitama 3388570, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 2007年 / 46卷 / 29-32期

关键词：

silicon carbide (SiC); (0001) C-face; oxidation; in-situ ellipsometry; Deal-Grove model; Massoud empirical equation;

D O I：

10.1143/JJAP.46.L770

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The thermal oxidation of silicon carbide (SiC) has been studied by performing in-situ ellipsometry. We have found that the oxidation rates at the oxidation thickness of approximately less than around 20 nm are much larger than those given using the Deal-Grove (D-G) model, suggesting that the oxidation time dependence of the oxide thickness cannot be explained using the D-G model, i.e., a simple linear-parabolic model, in the initial oxidation stage. By using the empirical relation, which has been proposed for Si oxidation, i.e., adding an exponential term to the D-G equation, the origin of the growth rate enhancement in SiC oxidation has been discussed.

引用

页码：L770 / L772

页数：3

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