Quantum Dot Color Conversion Efficiency Enhancement in Micro-Light-Emitting Diodes by Non-Radiative Energy Transfer

被引：9

作者：

Du, Zaifa ^{[1
]}

Li, Dianlun ^{[2
,3
]}

Guo, Weiling ^{[1
]}

Xiong, Fangzhu ^{[1
]}

Tang, Penghao ^{[1
]}

Zhou, Xiongtu ^{[2
,3
]}

Zhang, Yongai ^{[2
,3
]}

Guo, Tailiang ^{[2
,3
]}

Yan, Qun ^{[2
,3
]}

Sun, Jie ^{[2
,3
]}

机构：

[1] Beijing Univ Technol, Key Lab Optoelect Technol, Beijing 100124, Peoples R China

[2] Fujian Sci & Technol Innovat Lab Optoelect Inform, Fuzhou 350100, Peoples R China

[3] Fuzhou Univ, Coll Phys & Informat Engn, Fuzhou 350108, Peoples R China

来源：

IEEE ELECTRON DEVICE LETTERS | 2021年 / 42卷 / 08期

关键词：

mu LED; color-conversion efficiency; non-radiative energy transfer; WHITE LEDS; GAMUT; WELL;

D O I：

10.1109/LED.2021.3089580

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The quantum dot (QD) color-conversion efficiency (CCE) in GaN micro-light-emitting diodes (mu LEDs) is greatly improved by non-radiative energy transfer (NRET) mechanism. An array of deep nano-holes with a diameter of about 1 mu m was fabricated in mu LED mesas (40 x 60 mu m(2)) by nanoimprint lithography. The nano-holes were etched straight through the mu LED active region to ensure that the filled QDs were in extremely close contact with the active region. The absorption efficiency and emission efficiency of QDs are effectively improved by NRET, resulting in a super-high CCE in QD-mu LED hybrid devices. Compared to mu LED devices with conventional spin-coated QDs, the CCE of novel nano-hole mu LEDs with filled QDs has been enhanced by about 118%.

引用

页码：1184 / 1187

页数：4

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