Transparent semiconductor zinc oxide thin films deposited on glass substrates by sol-gel process

被引：75

作者：

Tsay, Chien-Yie ^{[1
]}

Fan, Kai-Shiung ^{[1
]}

Wang, Yu-Wu ^{[2
]}

Chang, Chi-Jung ^{[3
]}

Tseng, Yung-Kuan ^{[4
]}

Lin, Chung-Kwei ^{[1
]}

机构：

[1] Feng Chia Univ, Dept Mat Sci & Engn, Taichung 407, Taiwan

[2] Natl Changhua Univ Educ, Grad Inst Photon, Changhua 500, Taiwan

[3] Feng Chia Univ, Dept Chem Engn, Taichung 407, Taiwan

[4] Natl Yunlin Univ Sci & Technol, Dept Cultural Heritage Conservat, Yunlin 640, Taiwan

来源：

CERAMICS INTERNATIONAL | 2010年 / 36卷 / 06期

关键词：

Films; Sol-gel processes; Surfaces; Optical properties; ZnO; OPTICAL-PROPERTIES; PREFERRED ORIENTATION; ZNO; TRANSISTORS; TEMPERATURE;

D O I：

10.1016/j.ceramint.2010.03.005

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Transparent semiconductor ZnO thin films were spin-coated onto alkali-free glass substrates by a sol gel process. The influence of ZnO sols synthesized via different solvents (2-ME, EtOH or IPA) on the surface morphologies, microstructures, optical properties and resistivities of the obtained films were investigated. The as-coated films were annealed in ambient air at 500 degrees C for 1 h. X-ray diffraction results showed all polycrystalline ZnO thin films to have preferred orientation along the (0 0 2) plane. The surface morphologies, optical transmittances and resistivity values of the sol gel derived ZnO thin films depended on the solvent used. The ZnO thin films synthesized with IPA as the solvent exhibited the highest average transmittance 92.2%, an RMS roughness of 4.52 nm and a resistivity of 1.5 x 10(5) Omega cm. (C) 2010 Elsevier Ltd and Techna Group S.r.l. All rights reserved.

引用

页码：1791 / 1795

页数：5

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