Magnetic-field sensor based on a thin-film SOI transistor

被引：9

作者：

Losantos, P ^{[1
]}

Cane, C

Flandre, D

Eggermont, JP

机构：

[1] CSIC, CNM, Ctr Nacl Microelect, E-08193 Barcelona, Spain

[2] Catholic Univ Louvain, B-3000 Louvain La Neuve, Belgium

来源：

SENSORS AND ACTUATORS A-PHYSICAL | 1998年 / 67卷 / 1-3期

关键词：

magnetic sensors; SOI; bipolar; VCBM;

D O I：

10.1016/S0924-4247(97)01771-8

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper presents a magnetic sensor on thin-film SOI-SIMOX that takes advantage of a previous bipolar structure, the VCBM (voltage-controlled bipolar MOS transistor) to improve magnetic response with low power consumption. The buried oxide avoids substrate currents, while keeping a high relative sensitivity, up to 50% T-1, of the sensor. The paper introduces the structure and theoretical operation regions for both electric and magnetic features. Experimental results on two devices validate the previous analysis, presenting the main figures of merit. Finally, the total device efficiency parameter is introduced. (C) 1998 Elsevier Science S.A. All rights reserved.

引用

页码：96 / 101

页数：6