Selenization of CIS and CIGS layers deposited by chemical spray pyrolysis

被引：5

作者：

Babu, B. J. ^{[1
,2
]}

Egaas, B. ^{[3
]}

Velumani, S. ^{[2
]}

机构：

[1] Madanapalle Inst Technol & Sci, Dept Phys, Chittoor 517325, AP, India

[2] CINVESTAV IPN, Dept Elect Engn SEES, Mexico City 07360, DF, Mexico

[3] Natl Renewable Energy Lab, 1617 Cole Blvd, Golden, CO 80401 USA

来源：

JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS | 2018年 / 29卷 / 18期

关键词：

FILM SOLAR-CELLS; THIN-FILMS;

D O I：

10.1007/s10854-018-8916-4

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Cu(In1 - x Ga (x) )Se-2 (CIGS) thin films with x = 0 (CIS) and x = 0.3 (CIGS) were prepared on Mo-coated glass substrate by using chemical spray pyrolysis at a substrate temperature of 350 A degrees C, followed by selenization treatment at 550 A degrees C in selenium environment under N-2 gas flow. X-ray diffraction patterns of as-deposited CIGS layers on Mo showed polycrystalline chalcopyrite phase with an intense (112) plane. Splitting of (204)/(220) and (116)/(312) planes for the film with x = 0.3 reveals deviation of tetragonal nature. Field emission scanning electron microscopy cross-sectional images of selenized films showed clear re-crystallization of grains. During the selenization process of the CIGS absorber, a thin interface layer of MoSe2 is formed. Line mapping of Mo/CIGS layer showed more gallium segregation at the interface of back contact resulting in band gap grading. Chemical composition and mapping of the as-deposited and selenized samples were determined by energy dispersive analysis of X-rays. This work leads to fabrication of low cost and large scale Mo/CIGS/CdS/ZnO/ZnO:Al device structure.

引用

页码：15369 / 15375

页数：7

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