Growth and structural, optical and electrical properties study of bulk GaN

被引：1
|
作者：
Gogova, D. [1 ,2 ]
Rudko, G. [3 ]
Siche, D. [1 ]
机构：
[1] Leibniz Inst Crystal Growth, Max Born Str 2, D-12489 Berlin, Germany
[2] Bulgarian Acad Sci, Cent Lab Solar Energy & New Energy Sources, BG-1784 Sofia, Bulgaria
[3] V Lashkarev Inst Semicondct Phys, UA-03028 Kiev, Ukraine
来源：
PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 9, NO 3-4 | 2012年 / 9卷 / 3-4期
关键词：
GaN; optical properties; photoluminescence; electrical properties; impurity levels; LAYERS;
D O I：
10.1002/pssc.201100799
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
High-quality GaN substrates with a thickness of 0.5 to 1.2 mm were prepared by halide vapor-phase epitaxy (HVPE) on c-plane sapphire and by means of a post-growth laser-induced lift-off or natural stress-induced (self-) separation process. Structural, optical and electrical properties of the grown material were studied in detail. Resistivity and doping concentrations dependence on temperature were investigated and the results revealed a low donor concentration (2x10(15) cm(-3) at 273 K) and a moderate resistivity (10-48 Omega cm) of the samples. Several deep levels observed in the DLTS spectra were identified. The study shows that the GaN material is self-compensated and a strong influence of point defects related to dislocations on electronic transport is observed. The HVPE growth on InGaN/GaN multi-quantum wells buffer layers and subsequent self-separation method was seen as advantageous, in comparison to the laser-induced lift-off one, in respect to a lower cost and better crystalline quality of the GaN material obtained. (C) 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
引用
收藏
页码：1048 / 1052
页数：5
相关论文
共 50 条
  • [31] Structural, optical, and electrical properties of ZnO nanofilms deposited over PS substrate
    Shabannia, Reza
    Selman, Abbas Mohammed
    MICRO & NANO LETTERS, 2017, 12 (07) : 422 - 424
  • [32] Optical and structural characteristics of virtually unstrained bulk-like GaN
    Gogova, D
    Kasic, A
    Larsson, H
    Pécz, B
    Yakimova, R
    Magnusson, B
    Monemar, B
    Tuomisto, F
    Saarinen, K
    Miskys, C
    Stutzmann, M
    Bundesmann, C
    Schubert, M
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2004, 43 (4A): : 1264 - 1268
  • [33] Study on tower-like GaN nanostructure: Growth, optical and fast UV sensing properties
    Wang, Ting
    Cao, Fa
    Ji, Xiaohong
    Zhang, Qinyuan
    SUPERLATTICES AND MICROSTRUCTURES, 2019, 134
  • [34] Electrical and optical properties of iron in GaN, AlN, and InN
    Wickramaratne, Darshana
    Shen, Jimmy-Xuan
    Dreyer, Cyrus E.
    Alkauskas, Audrius
    Van de Walle, Chris G.
    PHYSICAL REVIEW B, 2019, 99 (20)
  • [35] Electrical and optical properties of semi-insulating GaN
    Look, DC
    Reynolds, DC
    Jones, RL
    Kim, W
    Aktas, O
    Botchkarev, A
    Salvador, A
    Morkoc, H
    MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1997, 44 (1-3): : 423 - 426
  • [36] Effect of Dislocations on Electrical and Optical Properties in GaAs and GaN
    You, J. H.
    Johnson, H. T.
    SOLID STATE PHYSICS, 2009, 61 : 143 - +
  • [37] Optical and electrical properties of dislocations in plastically deformed GaN
    Yonenaga, I.
    Ohno, Y.
    Yao, T.
    Edagawa, K.
    JOURNAL OF CRYSTAL GROWTH, 2014, 403 : 72 - 76
  • [38] Optical and structural properties of Mg-ion implanted GaN nanowires
    Huang, P. J.
    Chen, C. W.
    Chen, J. Y.
    Chi, G. C.
    Pan, C. J.
    Kuo, C. C.
    Chen, L. C.
    Hsu, C. W.
    Chen, K. H.
    Hung, S. C.
    Chang, C. Y.
    Pearton, S. J.
    Ren, F.
    VACUUM, 2009, 83 (05) : 797 - 800
  • [39] Structural defects in bulk GaN
    Liliental-Weber, Z.
    dos Reis, R.
    Mancuso, M.
    Song, C. Y.
    Grzegory, I.
    Porowski, S.
    Bockowski, M.
    JOURNAL OF CRYSTAL GROWTH, 2014, 403 : 66 - 71
  • [40] Structural and Optical Properties of Disc-in-Wire InGaN/GaN LEDs
    Yan, Lifan
    Jahangir, Shafat
    Wight, Scott A.
    Nikoobakht, Babak
    Bhattacharya, Pallab
    Millunchick, Joanna M.
    NANO LETTERS, 2015, 15 (03) : 1535 - 1539
12345