Growth and structural, optical and electrical properties study of bulk GaN

被引：1

作者：

Gogova, D. ^{[1
,2
]}

Rudko, G. ^{[3
]}

Siche, D. ^{[1
]}

机构：

[1] Leibniz Inst Crystal Growth, Max Born Str 2, D-12489 Berlin, Germany

[2] Bulgarian Acad Sci, Cent Lab Solar Energy & New Energy Sources, BG-1784 Sofia, Bulgaria

[3] V Lashkarev Inst Semicondct Phys, UA-03028 Kiev, Ukraine

来源：

PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 9, NO 3-4 | 2012年 / 9卷 / 3-4期

关键词：

GaN; optical properties; photoluminescence; electrical properties; impurity levels; LAYERS;

D O I：

10.1002/pssc.201100799

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

High-quality GaN substrates with a thickness of 0.5 to 1.2 mm were prepared by halide vapor-phase epitaxy (HVPE) on c-plane sapphire and by means of a post-growth laser-induced lift-off or natural stress-induced (self-) separation process. Structural, optical and electrical properties of the grown material were studied in detail. Resistivity and doping concentrations dependence on temperature were investigated and the results revealed a low donor concentration (2x10(15) cm(-3) at 273 K) and a moderate resistivity (10-48 Omega cm) of the samples. Several deep levels observed in the DLTS spectra were identified. The study shows that the GaN material is self-compensated and a strong influence of point defects related to dislocations on electronic transport is observed. The HVPE growth on InGaN/GaN multi-quantum wells buffer layers and subsequent self-separation method was seen as advantageous, in comparison to the laser-induced lift-off one, in respect to a lower cost and better crystalline quality of the GaN material obtained. (C) 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

引用

页码：1048 / 1052

页数：5

共 16 条

[1] Growth and applications of Group III nitrides [J].

Ambacher, O .

JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1998, 31 (20) :2653-2710

[2]

Bruckner P., 2006, ANN REP 2006

[3] Freestanding high quality GaN substrate by associated GaN nanorods self-separated hydride vapor-phase epitaxy [J].

Chao, C. L. ;

Chiu, C. H. ;

Lee, Y. J. ;

Kuo, H. C. ;

Liu, Po-Chun ;

Tsay, Jeng Dar ;

Cheng, S. J. .

APPLIED PHYSICS LETTERS, 2009, 95 (05)

[4]

Ehrentraut D, 2010, SPRINGER SER MATER S, V133, P1, DOI 10.1007/978-3-642-04830-2

[5] Bulk GaN crystals grown by HVPE [J].

Fujito, Kenji ;

Kubo, Shuichi ;

Nagaoka, Hirobumi ;

Mochizuki, Tae ;

Namita, Hideo ;

Nagao, Satoru .

JOURNAL OF CRYSTAL GROWTH, 2009, 311 (10) :3011-3014

[6] Strain-free bulk-like GaN grown by hydride-vapor-phase-epitaxy on two-step epitaxial lateral overgrown GaN template [J].

Gogova, D ;

Kasic, A ;

Larsson, H ;

Hemmingsson, C ;

Monemar, B ;

Tuomisto, F ;

Saarinen, K ;

Dobos, L ;

Pécz, B ;

Gibart, P ;

Beaumont, B .

JOURNAL OF APPLIED PHYSICS, 2004, 96 (01) :799-806

[7] Optical and structural characteristics of virtually unstrained bulk-like GaN [J].

Gogova, D ;

Kasic, A ;

Larsson, H ;

Pécz, B ;

Yakimova, R ;

Magnusson, B ;

Monemar, B ;

Tuomisto, F ;

Saarinen, K ;

Miskys, C ;

Stutzmann, M ;

Bundesmann, C ;

Schubert, M .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2004, 43 (4A) :1264-1268

[8]

Gotz W, 1996, APPL PHYS LETT, V68, P3144, DOI 10.1063/1.115805

[9] III-nitrides: Growth, characterization, and properties [J].

Jain, SC ;

Willander, M ;

Narayan, J ;

Van Overstraeten, R .

JOURNAL OF APPLIED PHYSICS, 2000, 87 (03) :965-1006

[10] Effect of ammonia flow rate on impurity incorporation and material properties of Si-doped GaN epitaxial films grown by reactive molecular beam epitaxy [J].

Kim, W ;

Botchkarev, AE ;

Morkoc, H ;

Fang, ZQ ;

Look, DC ;

Smith, DJ .

JOURNAL OF APPLIED PHYSICS, 1998, 84 (12) :6680-6685

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