Graphene-Graphite Oxide Field-Effect Transistors

被引：76

作者：

Standley, Brian ^{[2
]}

Mendez, Anthony ^{[1
]}

Schmidgall, Emma ^{[3
]}

Bockrath, Marc ^{[1
]}

机构：

[1] Univ Calif Riverside, Dept Phys & Astron, Riverside, CA 92521 USA

[2] CALTECH, Dept Appl Phys, Pasadena, CA 91125 USA

[3] Technion Israel Inst Technol, Inst Solid State, Dept Phys, IL-32000 Haifa, Israel

来源：

NANO LETTERS | 2012年 / 12卷 / 03期

基金：

美国国家科学基金会;

关键词：

graphene; graphite oxide; eld-effect transistor; layered dielectric; ATOMIC-FORCE MICROSCOPE; CONDUCTANCE MICROSCOPY; SILICON DIOXIDE; INTERFERENCE; DIELECTRICS; TRANSPORT; DEVICES; CHARGE; FILMS; SIO2;

D O I：

10.1021/nl2028415

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Graphene's high mobility and two-dimensional nature make it an attractive material for field-effect transistors. Previous efforts in this area have used bulk gate dielectric materials such as SiO2 or HfO2. In contrast, we have studied the use of an ultrathin layered material, graphene's insulating analogue, graphite oxide. We have fabricated transistors comprising single or bilayer graphene channels, graphite oxide gate insulators, and metal top-gates. The graphite oxide layers show relatively minimal leakage at room temperature. The breakdown electric field of graphite was found to be comparable to SiO2, typically similar to 1-3 x 10(8) V/m, while its dielectric constant is slightly higher, kappa approximate to 4.3.

引用

页码：1165 / 1169

页数：5

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